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QM0016F Datasheet Preview

QM0016F Datasheet

N-Ch 100V Fast Switching MOSFETs

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QM0016F
N-Ch 100V Fast Switching MOSFETs
General Description
The QM0016F is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM0016F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
100V
RDSON
47m
ID
17.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
G DS
Rating
100
±20
17.5
11
4.2
3.4
54
43.3
27
34.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
3.6
Unit
/W
/W
Rev A.01 D040111




UBIQ

QM0016F Datasheet Preview

QM0016F Datasheet

N-Ch 100V Fast Switching MOSFETs

No Preview Available !

QM0016F
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=20A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=15A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=15A
VDD=50V , VGS=10V , RG=3.3Ω
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.098
38
40
1.5
-5.52
---
---
---
31
1.6
61
9
10.3
10.8
48
52
9.6
3848
137
82
Max.
---
---
47
50
2.5
---
10
100
±100
---
3.2
85
12.6
14.5
21.6
86
105
19.2
5387
192
115
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=15A
Min.
13.4
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=15A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
29
40
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=27A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
17.5
54
1.2
---
---
Unit
A
A
V
nS
nC
2


Part Number QM0016F
Description N-Ch 100V Fast Switching MOSFETs
Maker UBIQ
PDF Download

QM0016F Datasheet PDF






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