QM01N65D Datasheet | UBIQ Semiconductor

Description The QM01N65D is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM01N65D meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 12 Ω ID 1.2A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 650 ±30 1.2 0.8 2.4 67 1.3 41.6 -55 to 150 -55 to 150 Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient (Steady State)1 Thermal Resistance Junction-Case1 Typ. ----- Max. 62 3 Units V V A A A m J A W ℃ ℃ Unit ℃/W ℃/W Rev A.01 D060311 機密 第2頁 2011-06-22 - 2 - N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter...