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QM01N65L Datasheet Preview

QM01N65L Datasheet

N-Ch 650V Fast Switching MOSFETs

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QM01N65L
機密
1
2011-06-15 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM01N65L is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The QM01N65L meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
650V
RDSON
12
ID
0.2A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO-92 Pin Configuration
Absolute Maximum Ratings
G
D
S
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
650
±30
0.2
0.15
1
0.89
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
RθJA
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Typ.
---
Max.
140
Unit
/W
Rev A.01 D053011
1




UBIQ

QM01N65L Datasheet Preview

QM01N65L Datasheet

N-Ch 650V Fast Switching MOSFETs

No Preview Available !

QM01N65L
機密
2
2011-06-15 - 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
gfs Forward Transconductance
Rg Gate Resistance
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr Rise Time
Td(off)
Turn-Off Delay Time
Tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=0.15A
VGS=VDS , ID =250uA
VDS=520V , VGS=0V , TJ=25
VGS=±30V , VDS=0V
VDS=5V , ID=0.15A
VDS=0V , VGS=0V , f=1MHz
VDS=520V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω,
ID=1A
VDS=25V , VGS=0V , F=1MHz
Min.
650
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.63
10.5
---
-7.4
---
---
0.31
4.9
6.03
1.95
2.3
4.4
18.4
7.2
22.4
175
17.8
4.3
Max.
---
---
12
5
---
2
±100
---
9.8
8.4
2.7
3.2
8.8
33
14.4
45
245
25
6
Unit
V
V/
Ω
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=1A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
181
336
Max.
0.2
1
1
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM01N65L
Description N-Ch 650V Fast Switching MOSFETs
Maker UBIQ
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QM01N65L Datasheet PDF






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