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QM09N65F Datasheet Preview

QM09N65F Datasheet

N-Ch 650V Fast Switching MOSFETs

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QM09N65F pdf
QM09N65F
機密
1
2011-03-08 - 1 -
N-Ch 650V Fast Switching MOSFETs
General Description
The QM09N65F is the highest performance N-ch
MOSFETs with specialized high voltage
technology, which provide excellent RDSON and
gate charge for most of the SPS, Charger ,Adapter
and lighting applications .
The QM09N65F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
650V
RDSON
1.1
ID
9A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
GD
Rating
650
±30
9
6.9
18
34
8
30
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
4.2
Units
V
V
A
A
A
mJ
A
W
Unit
/W
/W
Rev A.02 D022310
1



UBIQ
UBIQ

QM09N65F Datasheet Preview

QM09N65F Datasheet

N-Ch 650V Fast Switching MOSFETs

No Preview Available !

QM09N65F pdf
QM09N65F
機密
2
2011-03-08 - 2 -
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
gfs Forward Transconductance
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr Rise Time
Td(off)
Turn-Off Delay Time
Tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=2.75A
VGS=VDS , ID =250uA
VDS=520V , VGS=0V , TJ=25
VGS=±30V , VDS=0V
VDS=10V , ID=2.75A
VDS=520V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω,
ID=1A
VDS=25V , VGS=0V , F=1MHz
Min.
650
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.7
0.95
---
-8.9
---
---
7
33
9.5
9.8
19
19.4
56.4
38
1538
100
1.9
Max.
---
---
1.1
5
---
2
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
Ω
V
mV/
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=50V , L=1mH , IAS=3.5A
Min.
6.6
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
---
---
---
trr Reverse Recovery Time
---
Qrr Reverse Recovery Charge
IF=1A , dI/dt=100A/µs , TJ=25---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
158
677
Max.
9
18
1
---
---
Unit
A
A
V
nS
nC
2


Part Number QM09N65F
Description N-Ch 650V Fast Switching MOSFETs
Maker UBIQ
Total Page 4 Pages
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