Datasheet4U Logo Datasheet4U.com

QM10N60F Datasheet - UBIQ

MOSFETs

QM10N60F Features

* z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 600V RDSON 0.7Ω ID 12A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO220F Pin Configuration Absolu

QM10N60F General Description

The QM10N60F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM10N60F meet the RoHS and Green Product requirement , 100% EAS guaranteed with full func.

QM10N60F Datasheet (319.66 KB)

Preview of QM10N60F PDF

Datasheet Details

Part number:

QM10N60F

Manufacturer:

UBIQ

File Size:

319.66 KB

Description:

Mosfets.

📁 Related Datasheet

QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE (Mitsubishi Electric Semiconductor)

TAGS

QM10N60F MOSFETs UBIQ

Image Gallery

QM10N60F Datasheet Preview Page 2 QM10N60F Datasheet Preview Page 3

QM10N60F Distributor