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QM2401D Datasheet Preview

QM2401D Datasheet

P-Ch 20V Fast Switching MOSFETs

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QM2401D
P-Ch 20V Fast Switching MOSFETs
General Description
The QM2401D is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM2401D meet the RoHS and Green Product
requirement , with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-20V
RDSON
52m
ID
-18.4A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO252 Pin Configuration
D
Absolute Maximum Ratings
G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S
Rating
-20
±12
-18.4
-11.6
-5.2
-4.2
-50
25
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
W
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
62
5
Unit
/W
/W
Rev A.03 D051211




UBIQ

QM2401D Datasheet Preview

QM2401D Datasheet

P-Ch 20V Fast Switching MOSFETs

No Preview Available !

QM2401D
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-4.5V , ID=-15A
VGS=-2.5V , ID=-10A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=55
VGS=±12V , VDS=0V
VDS=-5V , ID=-15A
VDS=-15V , VGS=-4.5V , ID=-15A
VDD=-10V , VGS=-4.5V ,
RG=3.3Ω, ID=-15A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.014
42
67
-0.8
3.95
---
---
---
16.4
11.1
2.67
3.26
5.2
12.8
28.8
16
857
114
108
Max.
---
---
52
85
-1.2
---
1
5
±100
---
15.5
3.7
4.6
10.4
23
58
32
1200
160
151
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-15A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
11.6
2.6
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
-18.4
-50
-1
---
---
Unit
A
A
V
nS
nC
2


Part Number QM2401D
Description P-Ch 20V Fast Switching MOSFETs
Maker UBIQ
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QM2401D Datasheet PDF






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