QM2407K
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-4A
VGS=-2.5V , ID=-2A
VGS=-1.8V , ID=-1.5A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
VGS=±8V , VDS=0V
VDS=-5V , ID=-4A
VDS=-15V , VGS=-4.5V , ID=-4A
VDD=-10V , VGS=-4.5V , RG=3.3Ω
ID=-4A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
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-0.3
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Typ.
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-0.01
25
32
42
-0.5
2.96
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21
27.3
3.6
6.5
9.2
59
99
71
2280
220
187
Max.
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32
40
52
-1.0
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-1
-5
±100
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38.2
5.0
9.1
18.4
106
198
142
3192
308
262
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-4A , dI/dt=100A/µs , TJ=25℃
Min.
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Typ.
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52
28
Max.
-4.7
-18.8
-1
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Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
