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QM2409G - P-Ch 20V Fast Switching MOSFETs

Description

The QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 75mΩ ID -3.7A.

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Datasheet Details

Part number QM2409G
Manufacturer UBIQ
File Size 344.15 KB
Description P-Ch 20V Fast Switching MOSFETs
Datasheet download datasheet QM2409G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QM2409G P-Ch 20V Fast Switching MOSFETs General Description The QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2409G meet the RoHS and Green Product requirement with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS -20V RDSON 75mΩ ID -3.
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