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QM2415SM8 Datasheet Preview

QM2415SM8 Datasheet

P-Ch 20V Fast Switching MOSFETs

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QM2415SM8
P-Ch 20V Fast Switching MOSFETs
General Description
The QM2415SM8 is the highest performance
trench P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2415SM8 meet the RoHS and Green
Product requirement , with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-20V
RDSON
130m
ID
-3.3A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK 3X2 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating
-20
±8
-3.3
-2
-7
1.79
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
110
70
Unit
/W
/W
Rev A.01 D110209
1




UBIQ

QM2415SM8 Datasheet Preview

QM2415SM8 Datasheet

P-Ch 20V Fast Switching MOSFETs

No Preview Available !

QM2415SM8
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-4.5V , ID=-3A
VGS=-2.5V , ID=-2.5A
VGS=-1.8V , ID=-1A
VGS=VDS , ID =-250uA
VDS=-20V , VGS=0V , TJ=25
VDS=-20V , VGS=0V , TJ=55
VGS=±8V , VDS=0V
VDS=-5V , ID=-0.9A
VDS=-12V , VGS=-4.5V , ID=-3A
VDD=-12V , VGS=-4.5V ,
RG=3.3Ω, ID=-3A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.005
105
145
185
-0.6
2.24
---
---
---
3.38
6.77
0.55
2.94
5.8
19.1
19.7
6.5
346
50
42
Max.
---
---
130
170
220
-1
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Schottky Diode Characteristics
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
-3.3
-7
-1
Unit
A
A
V
Symbol
VF
IR
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
IS=0.5A
VR=20V
Conditions
Min.
---
Typ.
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
0.5
0.1
Unit
V
mA
2


Part Number QM2415SM8
Description P-Ch 20V Fast Switching MOSFETs
Maker UBIQ
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