QM2518C1
Description
The QM2518C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
Key Features
- z Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available Product Summery BVDSS 20V RDSON 90mΩ ID 1.52A
