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QM2N7002E3K1 Datasheet Preview

QM2N7002E3K1 Datasheet

N-Ch 60V Fast Switching MOSFETs

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QM2N7002E3K1
N-Ch 60V Fast Switching MOSFETs
General Description
The QM2N7002E3K1 is the highest performance
trench N-CH MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2N7002E3K1 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z High-speed switching
z Green Device Available
z ESD Protected:2KV
Product Summery
BVDSS
60V
RDSON
3
ID
180mA
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC
z Networking DC-DC Power System
z Load Switch
SOT23S Pin Configuration
D
G
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S
Rating
60
±20
180
150
1.2
0.2
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
Thermal Data
Symbol
RθJA
Parameter
Thermal Resistance Junction-Ambient 1
Typ.
---
Max.
625
Unit
/W
Rev A.01 D091311
1




UBIQ

QM2N7002E3K1 Datasheet Preview

QM2N7002E3K1 Datasheet

N-Ch 60V Fast Switching MOSFETs

No Preview Available !

QM2N7002E3K1
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=0.5A
VGS=4.5V , ID=0.2A
VGS=VDS , ID =250uA
VDS=60V , VGS=0V , TJ=25
VDS=60V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=0.3A
VDD=30V , VGS=10V , RG=3.3Ω,
ID=0.5A
VDS=25V , VGS=0V , f=1MHz
Min.
60
---
---
---
1
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.05
0.8
1
---
-3.7
---
---
---
940
3
1.8
8
6.8
40
12
7.6
Max.
---
---
3
4
2.5
---
1
5
±10
---
6
3.3
16
13.6
56
17
10.6
Unit
V
V/
Ω
V
mV/
uA
uA
mS
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
180
1.2
1
Unit
mA
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature.
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM2N7002E3K1
Description N-Ch 60V Fast Switching MOSFETs
Maker UBIQ
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