900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UBIQ

QM3007J Datasheet Preview

QM3007J Datasheet

P-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3007J
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3007J is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3007J meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
70m
ID
-6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT89 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, -VGS @ -10V1
Continuous Drain Current, -VGS @ -10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
GD S
Rating
-30
±20
-6
-4.6
-12
3.47
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
85
36
Unit
/W
/W
Rev A.01 D012510
1




UBIQ

QM3007J Datasheet Preview

QM3007J Datasheet

P-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3007J
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-3A
VGS=-4.5V , ID=-1.5A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-3A
VDS=0V , VGS=0V , f=1MHz
VDS=-20V , VGS=-4.5V , ID=-5A
VDD=-15V , VGS=-10V , RG=3.3Ω
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.02
55
90
-1.5
4.32
---
---
---
5.5
24
5.22
1.25
2.3
18.4
11.4
39.4
5.2
463
82
68
Max.
---
---
70
120
-2.5
---
-1
-5
±100
---
48
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
-6
-12
-1
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM3007J
Description P-Ch 30V Fast Switching MOSFETs
Maker UBIQ
Total Page 4 Pages
PDF Download

QM3007J Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 QM3007J P-Ch 30V Fast Switching MOSFETs
UBIQ
2 QM3007K P-Ch 30V Fast Switching MOSFETs
UBIQ
3 QM3007S P-Ch 30V Fast Switching MOSFETs
UBIQ





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy