Description
The QM3016M3/N3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
Features
- z Advanced high cell density Trench technology
zd Super Low Gate Charge
z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Absolute Maximum Ratings
Pin Configuration D
D
S SS G QM3016M3in
S S SG QM3016N3in
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current.
QM3016M3 Datasheet
