QM3807M6 Datasheet, UBIQ

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available QM3807M6 Dual N-C.

. The QM3807M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. .

The QM3807M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3807M6 meet the RoHS and Green Product requirem.