Datasheet4U Logo Datasheet4U.com

QM4306S - N-Ch and P-Ch Fast Switching MOSFETs

Description

The QM4306S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 40V -40V RDSON 10mΩ 17mΩ ID 19A -14.3A.

📥 Download Datasheet

Datasheet preview – QM4306S

Datasheet Details

Part number QM4306S
Manufacturer UBIQ
File Size 365.07 KB
Description N-Ch and P-Ch Fast Switching MOSFETs
Datasheet download datasheet QM4306S Datasheet
Additional preview pages of the QM4306S datasheet.

📁 Similar Datasheet

  • QM400HA-24 - Transistor (Mitsubishi Electric Semiconductor)
  • QM400HA-24B - Transistor (Mitsubishi Electric Semiconductor)
  • QM400HA-2H - Transistor (Mitsubishi Electric Semiconductor)
  • QM400HA-2HB - Transistor (Mitsubishi Electric Semiconductor)
  • QM400HA-H - Transistor (Mitsubishi Electric Semiconductor)
Other Datasheets by UBIQ
  • QM4306D - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4301D - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4301S - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4302D - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4302S - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4305D - N-Ch and P-Ch Fast Switching MOSFETs
  • QM4001D - P-Ch 40V Fast Switching MOSFETs
  • QM4001S - P-Ch 40V Fast Switching MOSFETs

Full PDF Text Transcription

Click to expand full text
QM4306S N-Ch and P-Ch Fast Switching MOSFETs General Description The QM4306S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM4306S meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 40V -40V RDSON 10mΩ 17mΩ ID 19A -14.
Published: |