QM4306S Datasheet | UBIQ Semiconductor

Description The QM4306S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM4306S meet the Ro HS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 40V -40V RDSON 10mΩ 17mΩ ID 19A -14.3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range S1 G1S2 G2 Rating N-Ch 40 ±20 P-Ch -40 ±20 19 -14.3 14.7 -11 38 -28.5 190 262 47 -54 5.2 5.2 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 Typ. ----- Max. 85 24 Unit ℃/W...