QM6003S - P-Ch 60V Fast Switching MOSFETs

Description

The QM6003S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 60mΩ ID -5.7A.

UBIQ

📥 Download Datasheet

Datasheet Details

Part number	QM6003S
Manufacturer	UBIQ
File Size	348.02 KB
Description	P-Ch 60V Fast Switching MOSFETs
Datasheet	QM6003S Datasheet
Additional preview pages of the QM6003S datasheet.

📁 Similar Datasheet

QM6008G - N-Channel 60V MOSFET (VBsemi)
QM6008K - N-Channel 60V MOSFET (VBsemi)
QM600HD-M - Transistor (Mitsubishi Electric Semiconductor)

Other Datasheets by UBIQ

QM6003F - P-Ch 60V Fast Switching MOSFETs
QM6001D - P-Ch 60V Fast Switching MOSFETs
QM6004D - N-Ch 60V Fast Switching MOSFETs
QM6004F - N-Ch 60V Fast Switching MOSFETs
QM6004P - N-Ch 60V Fast Switching MOSFETs
QM6004S - N-Ch 60V Fast Switching MOSFETs
QM6006B - N-Ch 60V Fast Switching MOSFETs
QM6006D - N-Ch 60V Fast Switching MOSFETs

Full PDF Text Transcription

Click to expand full text

QM6003S P-Ch 60V Fast Switching MOSFETs General Description The QM6003S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6003S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -60V RDSON 60mΩ ID -5.7A Applications z High Frequency Point-of-Load Synchronous Buck Converter.

Published: Dec 21, 2015 |