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QM6006S - N-Ch 60V Fast Switching MOSFETs

General Description

The QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 60V RDSON 18mΩ ID 6.3A.

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Datasheet Details

Part number QM6006S
Manufacturer UBIQ
File Size 344.79 KB
Description N-Ch 60V Fast Switching MOSFETs
Datasheet download datasheet QM6006S Datasheet

Full PDF Text Transcription for QM6006S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QM6006S. For precise diagrams, and layout, please refer to the original PDF.

QM6006S N-Ch 60V Fast Switching MOSFETs General Description The QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide exce...

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rench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006S meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 60V RDSON 18mΩ ID 6.