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QM6016F Datasheet Preview

QM6016F Datasheet

N-Ch 60V Fast Switching MOSFETs

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QM6016F
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6016F is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6016F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDSON
12m
ID
38A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
G DS
Rating
60
±20
38
24
9.2
7.5
95
123
38
34.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
3.6
Unit
/W
/W
Rev A.02 D091611




UBIQ

QM6016F Datasheet Preview

QM6016F Datasheet

N-Ch 60V Fast Switching MOSFETs

No Preview Available !

QM6016F
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=15A
VDD=30V , VGS=10V , RG=3.3Ω,
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.052
10
12
---
-5.76
---
---
---
42
1.5
28.7
10.5
9.9
10.4
9.2
63
4.8
3240
210
146
Max.
---
---
12
15
2.5
---
1
5
±100
---
3
40.2
14.7
14.0
20.8
16.6
126
9.6
4536
294
204
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=30A
Min.
77
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25
---
---
---
trr Reverse Recovery Time
---
Qrr Reverse Recovery Charge
IF=15A , dI/dt=100A/µs , TJ=25---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
18
14
Max.
38
95
1.2
---
---
Unit
A
A
V
nS
nC
2


Part Number QM6016F
Description N-Ch 60V Fast Switching MOSFETs
Maker UBIQ
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QM6016F Datasheet PDF






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