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QM6208V Datasheet Preview

QM6208V Datasheet

Dual N-Ch 60V Fast Switching MOSFETs

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QM6208V
Dual N-Ch 60V Fast Switching MOSFETs
General Description
The QM6208V is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6208V meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDSON
100m
ID
2.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
Rating
10s Steady State
60
±20
2.8 2.5
2.2 2
15
1.5 1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
---
Max.
110
85
70
Unit
/W
/W
/W
Rev A.01 D030711
1




UBIQ

QM6208V Datasheet Preview

QM6208V Datasheet

Dual N-Ch 60V Fast Switching MOSFETs

No Preview Available !

QM6208V
Dual N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=2A
VGS=4.5V , ID=1A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=2A
VDS=48V , VGS=4.5V , ID=2A
VDS=30V , VGS=10V , RG=3.3Ω,
ID=2A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.054
80
85
1.5
-4.96
---
---
---
13.2
5
1.61
1.96
2
23.8
12.4
19.6
511
38
25
Max.
---
---
100
110
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=2A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
10.5
6
Max.
2.5
15
1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM6208V
Description Dual N-Ch 60V Fast Switching MOSFETs
Maker UBIQ
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QM6208V Datasheet PDF






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