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QM8014D Datasheet Preview

QM8014D Datasheet

N-Ch 80V Fast Switching MOSFETs

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QM8014D
N-Ch 80V Fast Switching MOSFETs
General Description
The QM8014D is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM8014D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
80V
RDSON
100m
ID
11.8A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
G
Rating
80
±20
11.8
7.5
3
2.4
25
20.5
17.6
31.3
2.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
4
Unit
/W
/W
Rev A.01 D071111
1




UBIQ

QM8014D Datasheet Preview

QM8014D Datasheet

N-Ch 80V Fast Switching MOSFETs

No Preview Available !

QM8014D
N-Ch 80V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=10A
VGS=4.5V, ID=8A
VGS=VDS , ID =250uA
VDS=64V , VGS=0V , TJ=25
VDS=64V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=10A
VDS=0V , VGS=0V , f=1MHz
VDS=64V , VGS=10V , ID=10A
VDD=40V , VGS=10V , RG=3.3Ω,
ID=10A
VDS=15V , VGS=0V , f=1MHz
Min.
80
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.072
80
90
---
-4.7
---
---
---
14.7
2.8
18.6
3.9
3.2
5
25
21
7.6
1090
60
41
Max.
---
---
100
115
2.5
---
1
5
±100
---
5.6
26
5.5
4.5
10
45
42
15.2
1526
84
57
Unit
V
V/
mΩ
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=50V , L=0.1mH , IAS=12A
Min.
9.5
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25
IF=10A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
18.6
17.7
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=17.6A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
11.8
25
1.2
---
---
Unit
A
A
V
nS
nC
2


Part Number QM8014D
Description N-Ch 80V Fast Switching MOSFETs
Maker UBIQ
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QM8014D Datasheet PDF






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