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QM8205V Datasheet Preview

QM8205V Datasheet

Dual N-Ch Fast Switching MOSFETs

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General Description
The QM8205V is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM8205V meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
QM8205V
Dual N-Ch Fast Switching MOSFETs
Product Summery
BVDSS
20V
RDSON
25m
ID
6A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±8
6
4.8
30
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
110
85
70
Unit
/W
/W
/W
Rev A.01 D090711




UBIQ

QM8205V Datasheet Preview

QM8205V Datasheet

Dual N-Ch Fast Switching MOSFETs

No Preview Available !

QM8205V
Dual N-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=4.5V , ID=6A
VGS=2.5V , ID=5.2A
VGS=1.8V , ID=5A
VGS=VDS , ID =250uA
VDS=16V , VGS=0V , TJ=25
VDS=16V , VGS=0V , TJ=55
VGS=±8V , VDS=0V
VDS=5V , ID=6A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=6A
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
20
---
---
---
0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.014
20
25
34
0.5
-1.74
---
---
---
29
1.1
10.4
1.3
2.6
3.2
9.8
31
3.6
630
66
63
Max.
---
---
25
32
42
1
---
1
5
±100
---
2.2
14.6
1.8
3.6
6.4
17.6
62
7.2
882
92
89
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=6A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
5.4
7
Max.
6
30
1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t 10s.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM8205V
Description Dual N-Ch Fast Switching MOSFETs
Maker UBIQ
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QM8205V Datasheet PDF






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