QN3103M6N - N-Channel 30V Fast Switching MOSFET

UBIQ

General Description

The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.3mΩ ID (TC=25℃) 68A.

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Datasheet Details

Part number	QN3103M6N
Manufacturer	UBIQ
File Size	331.46 KB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3103M6N Datasheet

Full PDF Text Transcription for QN3103M6N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QN3103M6N. For precise diagrams, and layout, please refer to the original PDF.

QN3103M6N N-Channel 30V Fast Switching MOSFET General Description The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which ...

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rmance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.

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