QN3103M6N
Description
The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3103M6N meet the Ro HS and Green Product requirement with full function reliability approved.
Features
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
BVDSS 30V
RDSON (VGS=10V)
6.3mΩ
ID (TC=25℃)
68A
Applications
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch
PRPAK 5X6 Pin Configuration
Absolute Maximum Ratings
SS S G
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @...
