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UM6116-4 - 2K x 8 High Speed CMOS SRAM

Download the UM6116-4 datasheet PDF. This datasheet also covers the UM6116-2 variant, as both devices belong to the same 2k x 8 high speed cmos sram family and are provided as variant models within a single manufacturer datasheet.

Description

The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a sign Ie 5 volt supply.

It is built with UMC's high performance CMOS process.

provides low standby current and high-reliability.

Features

  • Single 5V supply and high density 24 pin package.
  • High speed: Fast access time 70ns/90ns/120ns( max. ).
  • Low power standby and Standby: 5JlW (typ. ) Low power operation Operation: 250mW (typ. ).
  • Completely static RAM: No clock or timing strobe required.
  • Directly TTL compatible: All input and output.
  • Pin compatible with standard 16K EPROM/Mask ROM.
  • Equal access and cycle time General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UM6116-2_UMC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number UM6116-4
Manufacturer UMC
File Size 183.43 KB
Description 2K x 8 High Speed CMOS SRAM
Datasheet download datasheet UM6116-4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SUMO UM6116-2/ UM6116-3/ UM6116-4 2K X 8 High Speed CMOS SRAM Features • Single 5V supply and high density 24 pin package • High speed: Fast access time 70ns/90ns/120ns( max.) • Low power standby and Standby: 5JlW (typ.) Low power operation Operation: 250mW (typ.) • Completely static RAM: No clock or timing strobe required • Directly TTL compatible: All input and output • Pin compatible with standard 16K EPROM/Mask ROM • Equal access and cycle time General Description The UM6116 is a 16,384-bit static random access memory organized as 2048 words by 8 bits and operates from a sign Ie 5 volt supply. It is built with UMC's high performance CMOS process. Six-transistor full CMOS memory cell provides low standby current and high-reliability.
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