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P4SMFT11A - TVS

Download the P4SMFT11A datasheet PDF. This datasheet also covers the P4SMFT3.3A variant, as both devices belong to the same tvs family and are provided as variant models within a single manufacturer datasheet.

Description

TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive industries, munitions, telecommunications, aerospace industries, and intelligent control systems.

Features

  • ± Glass passivated or planar junction ± Excellent clamping capability ± Repetition rate (duty cycle): 0.01% ± Low profile package and low inductance ± 400W Peak Pulse power capability at 10×1000μs waveform. ± Fast response time: typically less than 1.0ps from 0V to VBR min. ± High temperature soldering: 260℃/10s at terminals. ± Plastic package has Underwriters Laboratory Flammability 94V-0. ± For surface mounted.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P4SMFT3.3A-UMD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P4SMFT11A
Manufacturer UMD
File Size 5.33 MB
Description TVS
Datasheet download datasheet P4SMFT11A Datasheet

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Other Datasheets by UMD

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
_______________________________________________________________________________________ UNITED MICRO DEVICE INC. P4SMFT Series _______________________________________________________________________________________ TVS Surface Mount - 400W Description Dimensions&Symbol€Unit:mmMax TVS diodes can be used in a wide range of applications which like consumer electronic products, automotive industries, munitions, telecommunications, aerospace industries, and intelligent control systems. Features ± Glass passivated or planar junction ± Excellent clamping capability ± Repetition rate (duty cycle): 0.01% ± Low profile package and low inductance ± 400W Peak Pulse power capability at 10×1000μs waveform. ± Fast response time: typically less than 1.0ps from 0V to VBR min.
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