P0260ED Datasheet - UNIKC

P0260ED N-Channel Transistor

P0260ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 2 1.4 8 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction.

P0260ED Datasheet (738.56 KB)