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P0260ED - N-Channel Transistor

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Part number P0260ED
Manufacturer UNIKC
File Size 738.56 KB
Description N-Channel Transistor
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P0260ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 2 1.4 8 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
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