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P0903BTG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID 64A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current 1
TC = 25 °C TC = 100 °C
ID IDM
64 40 150
Avalanche Current
IAS 35
Avalanche Energy
L = 0.1mH
EAS
64
Power Dissipation
TC = 25 °C TC = 100 °C
PD
62.5 25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 58A.
SYMBOL RqJC
TYPICAL
MAXIMUM UNIT 2 °CS/ W
Ver 1.
P0903BTG Datasheet
