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P1212AT Datasheet Preview

P1212AT Datasheet

N-Channel Enhancement Mode MOSFET

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P1212AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
120V
12mΩ @VGS = 10V
ID
75A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
47
300
Avalanche Current
IAS 55
Avalanche Energy
L = 0.5mH
EAS
765
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
128
51
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
0.97
62.5
UNITS
°C / W
REV 1.0
1 2014/5/13




UNIKC

P1212AT Datasheet Preview

P1212AT Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1212AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
120
1.5 2.8 4.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
75
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 50A
9.5 12
Forward Transconductance1
gfs
VDS = 25V, ID = 50A
90
DYNAMIC
Input Capacitance
Ciss
12300
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
831
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V, VGS = 10V, ID = 50A
VDD = 50V,
ID @ 50A, VGS = 10V, RGEN = 2.5Ω
390
178
80
51
20
140
65
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 50A, VGS = 0V
75
1.3
Reverse Recovery Time
trr
90
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
250
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/5/13


Part Number P1212AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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