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P1260AT - N-Channel MOSFET

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Datasheet Details

Part number P1260AT
Manufacturer UNIKC
File Size 451.18 KB
Description N-Channel MOSFET
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P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.65Ω @VGS = 10V 12A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 12 8.5 IDM 48 IAS 7.4 L = 10mH EAS 277 Power DissipationA TC = 25 °C PD 223 TC = 100 °C 89 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
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