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P1520ETF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
200V
198mΩ @VGS = 10V
15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
15 9.3
IDM
45
Avalanche Current
IAS
16.5
Avalanche Energy
L = 1mH
EAS
136
Power Dissipation
TC = 25 °C
PD
32
TC = 100 °C
13
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.8 62.5
UNITS °C / W
REV 1.
P1520ETF Datasheet
