P1610ATF Datasheet - UNIKC

P1610ATF N-Channel MOSFET

P1610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ @VGS = 10V 34A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C ID 34 TC = 100 °C 21 IDM 120 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C PD 48 TC = 100 °C 19 Mounting Torque3 Machin.

P1610ATF Datasheet (745.50 KB)