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P261ALV
Dual P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-12V
19mΩ @VGS = -4.5V
ID -8.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -12
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA= 70 °C
ID IDM
-8.5 -6.8 -34
Avalanche Current
IAS -35
Avalanche Energy
L = 0.1mH
EAS
61
Power Dissipation
TA= 25 °C TA= 70°C
PD
2 1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
1Pulse width limited by maximum junction temperature.
P261ALV Datasheet
