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P3010BV Datasheet Preview

P3010BV Datasheet

N-Channel Enhancement Mode MOSFET

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P3010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
30mΩ @VGS = 10V
ID
5.8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
5.8
4.6
37
Avalanche Current
IAS 12
Avalanche Energy
L =1mH EAS 72
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2.3
1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
53
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/11/21




UNIKC

P3010BV Datasheet Preview

P3010BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P3010BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 55 °C
100
1.3
1.8 2.3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
27 35
25.5 30
46
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1908
138
87
pF
Gate Resistance
Rg VGS = 0V,VDS = 0V,f = 1MHz 0.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 50V,
ID = 5A,VGS = 10V
Qgd
41
5.6
12.5
Turn-On Delay Time2
td(on)
16
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 5A,VGS = 10V, RGEN = 6Ω
45
47
Fall Time2
tf
38
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 5A, dl/dt = 100A / mS
28
25
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.9
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014/11/21


Part Number P3010BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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