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P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V
27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID
Channel
10A
N
-7A
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N
30
VDS
P
-30
Gate-Source Voltage
N
±20
VGS
P
±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N
10
P
-7
ID
N
7
P
-5
Pulsed Drain Current1
N
20
IDM
P
-20
Power Dissipation
TA = 25 °C TA = 70 °C
N
2.5
P
2.5
PD
N
1.6
P
1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1%.
P5003QVG Datasheet
