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UNIKC

P6010DDG Datasheet Preview

P6010DDG Datasheet

N-Channel Transistor

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P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-20
-12
-60
Avalanche Current
IAS -54
Avalanche Energy
L = 0.1mH
EAS
149
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
75
UNITS
°C / W
REV 1.2
1 2014/5/26




UNIKC

P6010DDG Datasheet Preview

P6010DDG Datasheet

N-Channel Transistor

No Preview Available !

P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-100
-1.5 -2.7 -4
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-60
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -7V, ID = -18A
VGS = -10V, ID = -20A
VDS = -5V, ID = -20A
53 72
51 60
35
DYNAMIC
Input Capacitance
Ciss
4960
Output Capacitance
Coss VGS = 0V, VDS = -25V, f = 1MHz
224
Reverse Transfer Capacitance
Crss
167
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -20A
VDS = -20V,
ID@ -1A, VGS = -10V, RGS = 6Ω
4.6
90
19
24
20
25
120
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -20A, VGS = 0V
-20
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
84.3
256
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.2
2 2014/5/26



Part Number P6010DDG
Description N-Channel Transistor
Maker UNIKC
Total Page 5 Pages
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P6010DDG Datasheet PDF





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