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PA210BC Datasheet Preview

PA210BC Datasheet

N-Channel Enhancement Mode MOSFET

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PA210BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID
3A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3
1.9
26
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
34
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
60 °C / W
Ver 1.0
1 2012/4/12




UNIKC

PA210BC Datasheet Preview

PA210BC Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PA210BC
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 3A
VGS = 10V, ID = 3A
VDS = 5V, ID = 3A
100
123
±100
1
10
26
104 130
94 120
10
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1410
114
Reverse Transfer Capacitance
Crss
58
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 3A
Qgd
29
5
9
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID@ 3A, VGS = 10V, RGS = 6Ω
4.5
3
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / mS
47
76
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3
1.4
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12


Part Number PA210BC
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
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