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PA504EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
150mΩ @VGS = -10V
ID -2.7A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
-2.7 -2.1 -15
Avalanche Current
IAS -10
Avalanche Energy
L = 0.1mH
EAS
5
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.8 1.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient
RqJA
70
1Pulse width limited by maximum junction temperature.
PA504EV Datasheet
