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PD1503BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID 12A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
12 9 50
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS
39
Power Dissipation
TA = 25 °C TA = 70 °C
PD
3.1 2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
ABSLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
SCHOTTKY
Reverse Current
VR = 45V
IR 0.06
Forward Voltage
IF = 2A
VF 0.
PD1503BV Datasheet
