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PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.8mΩ @VGS = 10V
Q1 30V 21.0mΩ @VGS = 10V
ID 9A 8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current2 Pulsed Drain Current1 , 2
TA = 25 °C TA = 70 °C
ID
9 7
8 6
IDM 35 30
Avalanche Current
IAS 29 21
Avalanche Energy
L = 0.1mH
EAS
43
23
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.
PD1503YVS Datasheet
