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PD6B2BA - N-Channel MOSFET

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Part number PD6B2BA
Manufacturer UNIKC
File Size 773.94 KB
Description N-Channel MOSFET
Datasheet download datasheet PD6B2BA Datasheet
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PD6B2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.2mΩ @VGS = 10V ID 63A TO-252 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 63 40 120 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A.
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