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PE5A0DZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

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PE5A0DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 6mΩ @VGS = 4.5V
ID
55A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
55
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
ID
35
19
Pulsed Drain Current1
TA = 70 °C
IDM
15
100
Avalanche Current
IAS 32
Avalanche Energy
L = 0.1mH
EAS
51
TC = 25 °C
31
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
12.5
3.6
TA = 70 °C
2.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RJA
35
Junction-to-case
RJC
4
1Pulse width limited by maximum junction temperature.
2Package limitation current is 18A.
3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.4
1 2015/10/23




UNIKC

PE5A0DZ Datasheet Preview

PE5A0DZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

No Preview Available !

PE5A0DZ
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.4 0.7 1
±30
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 125 °C
1
10
VGS = 4.5V, ID = 3A
456
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 3.9V, ID = 3A
VGS = 2.5V, ID = 3A
4.2 5.2 6.8
4.8 5.8 8
Forward Transconductance1
gfs
VGS = 1.8V, ID = 3A
VDS = 5V, ID = 3A
7.2 8.7 12
43
DYNAMIC
Input Capacitance
Ciss
2111
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
320
Reverse Transfer Capacitance
Crss
282
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.7
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=4.5V)
Qg(VGS=3.9V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, ID = 3A
VDD = 15V
ID @ 3A, VGEN = 4.5V, RG = 6Ω
29
25.5
2.5
7.3
20
40
72
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
25.8
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
21
8
3Package limitation current is 18A.
UNITS
V
mA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.4
2 2015/10/23


Part Number PE5A0DZ
Description Dual N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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