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PM5G8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22.5mΩ @VGS = 4.5V
ID 5.7A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
5.7 4.5 16
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
1.25 0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RqJA RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
PM5G8EA Datasheet
