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PZ509BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
135mΩ @VGS = -10V
ID -1.2A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C
ID
-1.2
TA = 70 °C
-0.9
IDM
-5.2
Power Dissipation
TA = 25 °C
PD
0.3
TA = 70 °C
0.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM UNITS
360
°C / W
REV 1.
PZ509BA Datasheet
