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PZ558EZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V
3Ω @VGS = 4V
ID 0.2A
SOT-363
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±16
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C
ID
TA = 70 °C
IDM
0.24 0.17 0.7
Power Dissipation
TA = 25 °C
PD
TA = 70 °C
0.29 0.19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A A W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS
413
°C / W
REV 1.
PZ558EZ Datasheet
