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TD304BH Datasheet Preview

TD304BH Datasheet

N-Channel Enhancement Mode MOSFET

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TD304BH
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
57A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
57
37
150
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
40
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
REV 1.2
1 2015/1/28




UNIKC

TD304BH Datasheet Preview

TD304BH Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

TD304BH
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.2 1.6 2.8
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
11.5 18
7.5 9
35
DYNAMIC
Input Capacitance
Ciss
900
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
185
Reverse Transfer Capacitance
Crss
120
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V
ID = 20A
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
1.4
22
5
6.5
15
25
60
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
57
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
23
15
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.2
2 2015/1/28


Part Number TD304BH
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
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