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10N65Z - 10A 650V N-CHANNEL POWER MOSFET

General Description

The UT C 10N 65Z is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av alanche char acteristics.

Key Features

  • ES.
  • RDS(ON) =0.95Ω@ VGS=10V, ID=4.75A.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL.

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Full PDF Text Transcription for 10N65Z (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 10N65Z 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UT C 10N 65Z is a high voltag e a nd high curre nt p ower MOSFET, de...

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e UT C 10N 65Z is a high voltag e a nd high curre nt p ower MOSFET, designe d to hav e better charac teristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av alanche char acteristics. This po wer MOSF ET is usua lly used at high speed switching applications in power supplies, PWM motor co ntrols, h igh efficient D C to D C converters and b ridge circuits.  FEATURES * RDS(ON) =0.95Ω@ VGS=10V, ID=4.