Datasheet4U Logo Datasheet4U.com

18N25 - 18A 250V N-CHANNEL POWER MOSFET

General Description

The UTC 18N25 is a N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

This technology can withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(ON) < 0.24 Ω @ VGS=10V, ID=9.0A.
  • High switching speed.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

📥 Download Datasheet

Full PDF Text Transcription for 18N25 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 18N25. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 18N25 18A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N25 is a N-channel enhancement mode power MOSFET using UTC’s advanced planar...

View more extracted text
a N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies.  FEATURES * RDS(ON) < 0.24 Ω @ VGS=10V, ID=9.0A * High switching speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.