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19N10V - 100V N-Channel MOSFET

General Description

Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe, DMOS techno logy which has bee n tail ored esp ecially in the avalanche an d commutation mode to min imize on-state re sistance, provide sup erior s witching p er

Key Features

  • RDS(ON) = 0.1Ω @VGS = 10 V.
  • Ultra low gate charge ( typical 19nC ).
  • Low reverse transfer Capacitance ( CRSS = typical 32pF ).
  • Fast switching capability.
  • Avalanche energy Specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription for 19N10V (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 19N10V 100V N-Channel MOSFET „ DESCRIPTION Power MOSFET The U TC 100V N-Chan nel enhancement mode po wer fiel d effect transistors (MOSFET)...

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N-Chan nel enhancement mode po wer fiel d effect transistors (MOSFET) are pro duced by UTC’s plan ar stripe, DMOS techno logy which has bee n tail ored esp ecially in the avalanche an d commutation mode to min imize on-state re sistance, provide sup erior s witching p erformance, and withstand h igh en ergy pulse. T hey are suited for l ow voltage ap plications s uch as aud io amplifier, high efficiency switching DC/DC converters, and DC motor control. „ FEATURES * RDS(ON) = 0.

More Datasheets from Unisonic Technologies

Part Number Description
19N10 N-CHANNEL POWER MOSFET