SMDJ45C Datasheet | UN Semiconducctor

Description The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features u For surface mounted applications in order to optimize board space u Low leakage u Uni and Bidirectional unit u Glass passivated junction u Low inductance u Excellent clamping capability u 3000W Peak power capability at 10 × 1000µs waveform Repetition rate (duty cycle):0.01% u Fast response time: typically less than 1.0ps from 0 Volts to VBR min u Typical IR less than 5μA above 12V. u High Temperature soldering: 260°C/40 seconds at terminals u Typical maximum temperature coefficient ΔVBR = 0.1% × VBR@25°C× ΔT u Plastic package has Underwriters Laboratory Flammability 94V-0 u Matte tin lead- free Plated u Halogen free and Ro HS pliant u Typical failure mode is short from over-specified voltage or current u Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c u IEC-61000-4-2 ESD 15k V(Air), 8k V (Contact) u ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) u EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) Uni-directional Bi-directional Functional Diagram Cathode Bi-directional Uni-direction Anode Applications TVS devices are ideal for the protection of I/O interfaces, VCC bus and other vulnerable circuits used in Tele, puter, Industrial and Consumer electronic applications. Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note 1), (Note 2) Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3) Power Dissipation on Infinite Heat Sink at TL=75°C Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only (Note 4) PPPM IPP PM(AV) IFSM Operating junction and Storage Temperature Range. TJ , TSTG Notes: 1. Non-repetitive current pulse, per Fig. 3 and...