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01N30 - N-CHANNEL POWER MOSFET

Description

The UTC 01N30 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.

Features

  • RDS(ON) ≤ 9.0Ω @ VGS=10V, ID=0.05A.
  • High switching speed.
  • 100% avalanche tested.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 01N30 Preliminary 0.1A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 01N30 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.  FEATURES * RDS(ON) ≤ 9.0Ω @ VGS=10V, ID=0.05A * High switching speed * 100% avalanche tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 01N30L-AE3-R 01N30G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 1 2 3 G S D Packing Tape Reel  MARKING 01N30 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 4 QW-R205-357.
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