Datasheet Details
| Part number | 13N120-E2 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 239.04 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | 13N120-E2-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD 13N120-E2 Preliminary 13A, 1200V N-CHANNEL POWER MOSFET.
| Part number | 13N120-E2 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 239.04 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | 13N120-E2-UTC.pdf |
|
|
|
The UTC 13N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
FEATURES0 * RDS(ON) ≤ 1.5 Ω @ VGS=10V, ID=6.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13N120L-T47-T 13N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-D119.b 13N120-E2 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 1200 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 13 A Pulsed (Note 2) IDM 26 A Avalanche Energy Single Pulsed (Note 3) EAS 367 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.09 V/ns Power Dissipation PD 360 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
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